Ion Beam Etching Applications in RF Filter Processing

博客| 2021年3月18日

介绍

5G技术专注于向消费者提供增强的移动宽带服务。5G无线通信的进步带来了更快的下载/上传速度、每数据位成本的降低、更低的延迟等等。在一个互联互通日益增强的世界里,5G是有利的,也是必不可少的。

各国和航空公司目前正在准备必要的基础设施。首先,5G运营商将在不需要新核心建设的情况下提供数据速度。在未来两年内,5G射频前端(RFFE)滤波设备预计将增长20%至30%,如固体安装谐振器(SMR)和薄膜体声波谐振器“体声波”(FBAR BAW)。BAW滤光片可以制作成半导体激光器(SM)或薄膜FBAR。BAW支持1.5GHz以上的频率,是6GHz以下5G滤波器的理想技术,是对声表面波(SAW)设备的补充。

Ion beam etching

虽然活性腐蚀是可能的,标准ion beam etching (IBE) is a non-volatile physical process, and therefore it has a high material compatibility. Compared with other dry etching methods such as reactive ion etching (RIE), there is no risk of chemical corrosion, residue contamination, or under-cut damage that leads to device failure. This is because IBE avoids under-etching, which occurs frequently during RIE due to differences in material reactive selectivity. Table 1 gives more details on the advantages of IBE compared with RIE.

IBE是各向异性的,与RIE相比,IBE具有相对恒定的刻蚀速率,与材料或其厚度无关。这对于许多BAW器件制造商来说非常重要,因为被蚀刻的材料堆几乎总是由不同厚度的不同材料组成。这些因素,连同改进的均匀性、侧壁平滑、低离子损伤和去除欠刻蚀,最终导致具有改进的Q因子以及改进的成品率和器件性能的器件。图1显示了二氧化硅(SiO2)不同电压下夹具倾角范围的均匀性。

Device manufacturers may require vertical etch profiles, endpoint control, temperature control (to avoid photoresist burning), and minimal re-deposition. Here, we focus on two important etching steps and materials for BAW fabrication: electrode stack and piezoelectric (PZ) crystal etching.

电极层堆

BAW resonance frequency is determined in part by electrode thickness. Furthermore, electrodes and support layers for 5G RFFE devices can consist of various materials. Typically, high-density metals such as molybdenum (Mo) or tungsten (W) are used as electrodes, which allows for increased electromechanical coupling. Additional material layers may be added, for reasons such as electromigration and temperature compensation, among others. A diagram of a common FBAR is shown in Figure 2, illustrating such a stack. Finally, because photoresist burn impairs effective photoresist removal, threatening Q factor values, stacks must be etched in a timely manner with no burning or destruction of resist. Table 3 shows possible etch rates for Mo, W, and other materials.

表2展示了使用我们的方法刻蚀钼时获得的高刻蚀速率和均匀性兰瑟tunable source platform at two different operating powers. It also demonstrates the angle dependence of these two variables. Similarly, Figure 3 shows the angular dependence of etch rate for SiO2and W. Unlike chemical etching techniques, IBE etches through a stack of diverse materials reliably, with stability, and with no under-etch shape. Endpoint detection can be used, adding to the reliability of the process.

Piezoelectric (PZ) mini case study

氮化铝(AlN)是一种性能与工艺同步的压电材料。它具有固有的低阻尼、优良的导热性和较大的频率温度系数,并且沉积可靠。铝通常被化学计量的钪取代,因为这增加了它的PZ响应。虽然氮化铝钪(AlScN)化学性质稳定,但在蚀刻过程中使用反应性气体可能会导致PZ层中的化学残留物污染。由于良好的纹理和低粗糙度的PZ表面导致更高的机电耦合,这些参数已成为BAW器件制造商的关键技术指标。我们的标准氩气IBE避免了腐蚀性化学物质,导致蚀刻不足,损坏和化学污染。

图3显示了腐蚀速率与氮化铝角度的关系,而图4显示了在更紧的工艺角度窗口中,AlScN的均匀性和腐蚀速率。

结论

在Ve雷竞技官方网址eco,我们的IBE设备允许制造商应对RFFE过滤器制造可能面临的挑战。这些平台蚀刻单层和材料堆,无下蚀,蚀刻速度可靠,均匀度高,且无有害腐蚀化学物质和残留物污染。对于RFFE制造商今天面临的独特挑战,我们的IBE平台是一个极好的解决方案。在这里了解更多.

关于Veec雷竞技官方网址o

Veeco offers multiple platforms that are critical for 5G device manufacturing. Our proven ion beam, laser annealing, lithography, MOCVD, and single wafer etch and clean technologies play an integral role in the fabrication and packaging of advanced semiconductor devices. With equipment designed to optimize performance, yield, and cost of ownership, Veeco holds leading technology positions in the markets we serve. To learn more about Veeco’s systems and service offerings, visit www.froira.com.

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